|
|||||
|
|
Two-dimensional excitonic insulators: Si and Ge (111) surfaces |
|
| Authors: | E. Tosatti P.W. Anderson |
| Affiliation: | 1. Cavendish Laboratory, Cambridge, England;2. Bell Laboratories, Murray Hill, New Jersey 07974, USA |
| Abstract: | We suggest that dangling electrons at (111) surfaces of group IV semiconductors should have a 2-dimensional excitonic insulator ground state. The higher order reconstructions observed in Si and Ge are accounted for in detail. |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ | |