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Hole mobility in evaporated layers of As₂S₃.CdI₂

Authors:	J Banerji J Hirsch

Institution:	Birkbeck College (University of London) London, England

Abstract:	The hole drift mobility in As₂S₃.CdI₂ has been determined using Spear's method. The room-temperature value is 10^?4 $cm^{2} Vs$ , the activation energy 0.2 eV. The hole yield appears to be controlled by geminate recombination.

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