Electron loss spectroscopy of clean and oxygen covered GaAs(110) surfaces

Electron energy loss spectra of clean and oxygen covered GaAs(110) surfaces have been measured with a four grid retarding field analyser. Loss spectra of clean cleaved p- and n-type surfaces are slightly different and different states of adsorption for the oxygen on the two surfaces are found. The loss peaks which are common in the spectra obtained from clean surfaces of both types of material have been interpreted in terms of bulk and surface excitations. The data associated with the bulk excitations are in good agreement with previous optical and electron transmission data while loss peaks at 11.5 and 18.5 eV are interpreted as the surface plasma loss and a surface state transition respectively. For n-type material extra loss peaks were observed. In the case of oxygen adsorption on these surfaces new loss peaks were found at 13.5, 17.2 and 28.1 eV in both spectra and are assumed to be characteristic of the oxygen. Further, for n-type material an extra peak occurs at 8.2 eV.