Photomechanical vibration of thin crystals of polar semiconductors |
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Authors: | Jacek ?agowski Harry C Gatos |
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Institution: | Institute of Physics, Polish Academy of Sciences, Warsaw, Poland;Department of Metallurgy and Materials Science, and Department of Electrical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, U.S.A. |
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Abstract: | It was found that thin crystals of polar (non-centrosymmetric) semiconductors constitute a new type of photo-sensitive system in which incident illumination is converted into mechanical energy: thus, illumination-induced elastic deformation (bending) was observed on thin (00.1) CdS and (111) GaAs crystals; furthermore, by employing chopped light the crystals were excited to their resonant vibration (photomechanical vibration); the dependence of the amplitude of this vibration on the energy of the incident radiation was found to be similar to the dependence of the surface photovoltage on the energy of the incident radiation (surface photovoltage spectrum). The present findings are consistent with a model based on light-induced modulation of the piezoelectric surface stresses. |
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