The temperature dependence of the edge emission of GaSe single crystals at high excitation levels

The temperature dependence of five edge emission lines of GaSe at high excitation levels has been investigated by using the second harmonic of a neodymium-glass laser. The following lines were indentified at 77.3K:hv_B = 2.102 ± 0.002 eV, annihilation of free excitons; hv_C = 2.082 ± 0.003 eV, Auger recombination of free excitons; hv_D = 2.072 ± 0.003 eV and hv_E = 2.055 ± 0.004 eV, annihilation of free excitons with emission of optical phonons (LO₁ = 31 meVandLO₂ = 45 meV, respectively); hv_G = 2.036 ± 0.004 eV, radiative recombination at indirect transition with emission of LO₁ phonons.