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Electronic density of states of amorphous III–V semiconductors
Authors:J.D. Joannopoulos  Marvin L. Cohen
Affiliation:1. Department of Physics, University of California, U.S.A.;2. Inorganic Materials Research, Division, Lawrence Berkeley Laboratory Berkeley, California 94720, U.S.A.
Abstract:A short-range disorder model is used to predict the predominant features of the density of states of amorphous III–V semiconductors. Confirmation of this model would help establish the existence of III-III and V-V bonds in these materials.
Keywords:
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