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Low-loss large-area GaAs/GaAsP heterostructure as optical waveguide at 10.6 μm |
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| Authors: | D Finn WO Groves LG Hellwig MG Craford WSC Chang MS Chang BL Sopori |
| Institution: | Electronics Material Department, Monsanto Commercial Products Company, St. Louis, Missouri 63166, USA;Department of Electrical Engineering and Laboratory for Applied Electronic Sciences, Washington University, St. Louis, Missouri 63130, USA |
| Abstract: | GaAs/GaAsP heterostructures are fabricated as optical waveguides at 10.6 μm. The wafers are being grown with maximum dimensions of the order of 5 cm by vapor phase epitaxy. An attenuation rate of 2 dB/cm for a single mode waveguide and 1.5 dB/cm for a two-mode waveguide has been measured for the TE0 mode. |
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