The small signal behavior of SCLC-diodes with deep traps

Theoretical and experimental investigations on the small signal behavior of sclc-diodes containing deep levels were performed. The experimental results were obtained from high resistivity Au-compensated n⁺in⁺-silicon samples. The measurements of the frequency dependent conductance and capacitance are consistent with theory up to frequencies ωT>1. From the bias dependence of the capacitance a method is deduced to determine the capture time constant easily and with high accuracy and, if the trap concentration is already known, the capture cross section. The value obtained for the gold acceptor level agrees well with that determined by means of transient current measurements.