非均匀沟道MOS辐照正空间电荷迁移率模型

提出非均匀沟道MOS辐照正空间电荷迁移率模型.借助镜像法导出沟道电离杂质与辐照正空间电荷的二维场和二维互作用势的分布，由此给出非均匀n沟和p沟的迁移率表示式，其解析解与二维仿真值十分吻合.还借助二维仿真器计算均匀沟道MOS辐照正空间电荷迁移率的变化值，其值和文献［2，3］实验数据一致.关键词：非均匀沟道MOS镜像法二维互作用势

Mobility model of nonuniform channel MOS by radiation induced positive spatial charge

In this paper we suggest a radiation mobility shift model for the nonuniform channel metal-oxide-semiconductor(MOS). The distribution of two-dimensional(2D)-electric field and 2D-interaction potential, which is caused by the interaction between the ionized impurity in the depletion layer and radiation-induced positive spatial charge, is analyzed by using image charge method. The mobility expression of n-type and p-type nonuniform channel MOS is proposed. Using 2D simulator MEDICI, we simulate the mobility shift with the radiation-induced positive spatial charge. The nonuniform channel MOS's mobility shift numerical results agree well with the analytical results. Uniform channel MOS's mobility shift value agrees with that of the experiment.