Growth and structural investigation of new polycrystalline Ga<sub>3</sub>Se<sub>4</sub> semiconductor: Evaluation of its dielectric properties期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Growth and structural investigation of new polycrystalline Ga₃Se₄ semiconductor: Evaluation of its dielectric properties

Authors:	M.M. Abdullah Preeti Singh D.P. Singh G. Bhagavannarayana M.A. Wahab

Affiliation:	1. Crystal Growth & XRD Lab, Department of Physics, Jamia Millia Islamia, New Delhi 110025, India;2. Crystal Growth and Crystallography, Materials Characterization Division, National Physical Laboratory, New Delhi 110012, India;3. Centre for Advanced Materials and Nanoengineering (CAMNE), Najran University, P.O. Box 1988, Najran 11001, Saudi Arabia

Abstract:

Keywords:	Semiconductors Kinetics of synthesis Structural characterization Dielectric properties
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