A quantum electromechanical device: the electromechanical single-electron pillar

A new nanoelectromechanical device is introduced, useful for quantum electromechanics. The focus will be on single-electron transistors with a mechanical degree of freedom. The technical approach as well as the experimental realization of a new vertical mechanical single-electron tunneling device are discussed. This transistor is fabricated in a semiconductor material, forming a nanopillar between source and drain contacts. This concept can readily be transferred to large scale fabrication, being of importance for building integrated sensors and amplifier stages for quantum electromechanical circuits. Operation of the device at room temperature in the frequency range of 350–400 MHz is presented. A straightforward theoretical model of device operation is given.