Local field corrections to binding energies of substitutional and interstitial donors in Si and Ge |
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Authors: | R. Car Annabella Selloni M. Altarelli |
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Affiliation: | 1. Laboratoire de Physique Expérimentale, EPFL, Lausanne, Switzerland;2. Laboratoire de Physique Théorique, EPFL, Lausanne, Switzerland;3. Max-Planck-Institut für Festkörperforschung, 7 Stuttgart 80, Federal Republic of Germany |
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Abstract: | Intervalley Umklapp matrix elements, with inclusion of local field screening effects, are computed for substitutional and interstitial point-charge impurity potentials in Si and Ge. The shallow character of substitutional donors is not affected in Ge and is even reinforced in Si, where a 20% reduction of the binding energy is obtained as a consequence of the local field effect. In both semiconductors the local field corrections strongly reinforce the non-effective-mass, deep-level character of interstitial point-charge donors. |
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