Stress dependence of electron-hole liquid parameters in silicon

The electron-hole liquid recombination luminescence in silicon is studied as a function of stress up to corresponding valence band splittings of 30 meV for <100>- and <111>-stress directions. EHL densities and exchange-correlation energies as obtained from lineshape fits are in general agreement with recent theoretical data. Systematic deviations in detail, however, indicate that - contrary to simplifying theoretical assumptions - a band structure dependence of the exchange and correlation energy E_xc has to be taken into account.