The Au-SiO x -a-Si:H structures with very thin anodic oxide layers

Au-SiO_x-a-Si:H MIS structures with anodic oxide layers of thickness from 1.4 to 7.2 nm are investigated. The formation of the superthin SiO_x layers enables us to obtain photosensitive diode structures. These structures have a high photocurrent-to-dark current ratioi_ph/i_d >10⁴ and the dark resistanceR10¹⁰ for the reverse bias. The analysis of IR reflectance absorption spectra in the region of longitudinal Si-O stretching modes allows us to make a conclusion on the dependence of structure-chemical properties of superthin anodic oxids on their thickness.We thank Ing. J. Stuchlík from Czechoslovak Academy od Sciences for kindly manufacturing the a-Si:H films for us.