微波低噪声晶体管电磁脉冲敏感端对研究

 在研究电磁脉冲对微电子器件作用效应的过程中，针对三种不同型号的微波低噪声硅半导体器件进行了电磁脉冲（静电放电和方波电磁脉冲）直接注入的试验，结果发现该类器件对电磁脉冲最敏感的端对并不是EB结（发射极-基极），而是CB结（集电极-基极）。通过对器件结构与放电过程的分析，分别得出了CB结、EB结的损伤机理：随放电电压的增大，热载流子撞击界面，使流经界面处的少数载流子复合速度增加，少数载流子在界面处及界面附近被复合，从而降低了器件的电流放大系数。而无论从哪个结注入，器件完全失效均是由热二次击穿造成。从而更进一步地证明了CB结比EB结更敏感。

Electromagnetic pulse sensitive ports of micro-wave low-noise transistors

During the experiments on electromagnetic pulse(EMP) action utility of micro-electronic components,aimed at three kinds of micro-wave low-noise silicon dynatron transistors,positive EMP(including ESD and square-wave EMP) stresses were injected into all the combinations(CB,BC,CE,EC,EB and BE).Through recording and comparing the damaged voltage of each injected combination,it can be found that the most sensitive port to EMP of micro-wave low-noise transistors is not EB(emitter-base) but CB(collector-base).By analyzing the device fabric and the process of discharge,the failure mechanism of CB and EB is separately determined.So it makes clear that CB is more sensitive to EMP than EB.