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Investigation of Porous Silicon Wetting by Raman Scattering
Authors:M A Ferrara  M G Donato  L Sirleto  G Messina  S Santangelo  I Rendina
Institution:1. National Research Council-Institute for Microelectronics and Microsystems , Naples, Italy;2. University “Mediterranea,” Reggio Calabria , Reggio Calabria, Italy antrorella.ferrara@na.imm.cnr.it;4. University “Mediterranea,” Reggio Calabria , Reggio Calabria, Italy;5. National Research Council-Institute for Microelectronics and Microsystems , Naples, Italy
Abstract:Wetting phenomena in porous silicon layers are experimentally investigated by Raman scattering. The experimental results show a reversible blue-shift of Raman spectra of wetted porous silicon layers with respect to the unperturbed layers. We ascribe the shift to a compressive stress due to the increased lattice mismatch between the porous silicon layer and the bulk silicon substrate in wetting conditions.
Keywords:porous silicon  Raman scattering  wetting phenomena
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