Light Emission and Scanning Electron Microscopic Characterization of Porous Silicon

Optical emission resulting from sputtered species during ion bombardment of porous and oxidized porous silicon targets has been studied. Samples were bombarded with 5‐keV Kr⁺ ions at an incidence angle of 70 degrees, and the light emitted was analyzed over the wavelength range 200–300 nm. The surface morphology was investigated, and the micrographs revealed grooves parallel to the plane of incidence when the porosity was surprisingly observed in the grooves under each pore. The results are discussed as a function of the incidence angle and the porosity of the silicon targets.