Surface morphology of silicon single crystals treated with acid polishing etchants

The specific features of formation of micro-and nanorelief on the (001) surface of silicon single crystals upon treatment with widely used etchants HF HNO₃ H₂O and with poorly studied etchants HF KMnO₄ H₂O were studied. The relief of the etched surface was examined by optical, scanning electron, and atomic-force microscopy. The polishing properties of the etchants and the silicon etching rates were studied in relation to the oxidant content. The polishing properties of the etchants were compared by analyzing statistical distribution of such characteristics of the relief of the etched surface as the height and length of micro- and nanowaves.