Antibonding ground state of holes in double vertically coupled Ge/Si quantum dots |
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Authors: | A. I. Yakimov V. A. Timofeev A. I. Nikiforov A. V. Dvurechenskii |
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Affiliation: | 1.Rzhanov Institute of Semiconductor Physics, Siberian Branch,Russian Academy of Sciences,Novosibirsk,Russia |
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Abstract: | The existence of the antibonding ground state of holes in artificial molecules, which are formed by the vertically coupled Ge/Si quantum dots, has been proved experimentally. This phenomenon is absent in natural molecules and double quantum dots containing electrons. It is a consequence of spin-orbit interaction and deformation effects in the valence band of vertically aligned quantum dots. |
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