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Study of Thin Oxide Films by Electron, Ion and Synchrotron Radiation Beams
Authors:Väino Sammelselg  Eero Rauhala  Kai Arstila  Alex Zakharov  Jaan Aarik  Arvo Kikas  Juhan Karlis  Aivar Tarre  Anni Seppälä  Jelena Asari  Indrek Martinson
Institution:Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia, EE
Accelerator Laboratory, University of Helsinki, P.O. Box 9, FIN-00014 Helsinki, Finland, FI
MAX-lab, National Laboratory for Nuclear Physics and Synchrotron Radiation Research, P.O. Box 118, SE-22100 Lund, Sweden, SE
Institute of Materials Science, University of Tartu, T?he 4, 51010 Tartu, Estonia, EE
Department of Physics, Lund University, S?lvegatan 14, SE-22362, Sweden, SE
Abstract: Titanium oxide and zirconium oxide thin films deposited on silicon substrates were characterised using electron probe microanalysis (EPMA), Rutherford backscattering spectroscopy (RBS), time-of-flight elastic recoil detection analysis (TOF-ERDA) and scanning photoelectron microscopy (SPEM). The composition and mass thickness of the films were determined and the results of different methods compared. It was revealed that the synchrotron radiation used for SPEM studies caused considerable modification of zirconia films grown at low temperatures.
Keywords::   Oxide films  EPMA  RBS  TOF-ERDA  scanning photoelectron microscopy  
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