Synchrotron investigations of the electron structure of silicon nanocrystals in a SiO2 matrix

Silicon ions are implanted into silicon oxide thin films obtained by the thermal oxidation of silicon wafers in wet oxygen. The implantation dose is accumulated either once or cyclically, and the samples are annealed in dry nitrogen every time after implantation. The second series of samples is prepared in a similar way, but the technology for obtaining the oxide films includes additional annealing at 1100°C in air for three hours. X-ray absorption near-edge structure (XANES) spectra are obtained using synchrotron radiation. In all the Si L _2,3 spectra, two absorption edges are observed, the first corresponding to elemental silicon, and the second corresponding to the SiO₂ matrix. The fine structure of the first edge indicates that nanocrystalline silicon (nc-Si) can form in the SiO₂ matrix, whose atomic and electronic structure depends on the technology of its formation. In both series, the cyclic accumulation of the total dose (Φ = 10¹⁷ cm^?2) and the annealing time (2 h) gives rise to the most pronounced fine structure in the region of the absorption edge of elemental silicon. The probability of forming silicon nanocrystals decreases for the denser silicon oxide in the second series of samples.