Determination of antimony dopant and some ultra-trace elements in semiconductor silicon by atomic absorption spectrometry with introduction of solid samples into the furnace

Antimony as a dopant at a level of ca. 35 atom/10⁶ atoms (ppm, atomic) and ultra-trace concentrations of lead and manganese (<0.02 ppm, atomic) are determined in semiconductor silicon by atomic absorption spectrometry after introduction of milligram samples of silicon to a pyrolytically-coated graphite furnace. Calibration was done with standard aqueous solutions. Iron, silver, zinc and cadmium were sought but were at concentrations below the limits of detection. The graphite microboats used for sample introduction were useful for only 3–10 samples because of silicon carbide formation.