Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials |
| |
| Authors: | Xudong Zhu Yuqian Chen Zheng Liu Yulei Han Zhenhua Qiao |
| |
| Affiliation: | 1. ICQD, Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China2. CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei 230026, China3. Department of Physics, Fuzhou University, Fuzhou 350108, China |
| |
| Abstract: | We numerically study the general valley polarization and anomalous Hall effect in van der Waals (vdW) heterostructures based on monolayer jacutingaite family materials Pt2AX3 (A = Hg, Cd, Zn; X = S, Se, Te). We perform a systematic study on the atomic, electronic, and topological properties of vdW heterostructures composed of monolayer Pt2AX3 and two-dimensional ferromagnetic insulators. We show that four kinds of vdW heterostructures exhibit valley-polarized quantum anomalous Hall phase, i.e., Pt2HgS3/NiBr2, Pt2HgSe3/CoBr2, Pt2HgSe3/NiBr2, and Pt2ZnS3/CoBr2, with a maximum valley splitting of 134.2 meV in Pt2HgSe3/NiBr2 and sizable global band gap of 58.8 meV in Pt2HgS3/NiBr2. Our findings demonstrate an ideal platform to implement applications on topological valleytronics. |
| |
| Keywords: | quantum anomalous Hall effect valley polarization topological valleytronics transition metal dichalcogenides jacutingaite family materials first-principles calculations van der Waals heterostructure |
|
| 点击此处可从《Frontiers of Physics》浏览原始摘要信息 |
|
点击此处可从《Frontiers of Physics》下载全文 |
|
