Two dimensional GeO2/MoSi2N4 van der Waals heterostructures with robust type-II band alignment |
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| Authors: | Xueping Li Peize Yuan Lin Li Ting Liu Chenhai Shen Yurong Jiang Xiaohui Song Congxin Xia |
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| Affiliation: | 1. College of Electronic and Electrical Engineering, Henan Normal University, Xinxiang 453007, China2. Department of Physics, Henan Normal University, Xinxiang 453007, China3. Henan Key Laboratory of Optoelectronic Sensing Integrated Application, Henan Normal University, Xinxiang 453007, China |
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| Abstract: | Constructing two-dimensional (2D) van der Waals heterostructures (vdWHs) can expand the electronic and optoelectronic applications of 2D semiconductors. However, the work on the 2D vdWHs with robust band alignment is still scarce. Here, we employ a global structure search approach to construct the vdWHs with monolayer MoSi2N4 and wide-bandgap GeO2. The studies show that the GeO2/MoSi2N4 vdWHs have the characteristics of direct structures with the band gap of 0.946 eV and type-II band alignment with GeO2 and MoSi2N4 layers as the conduction band minimum (CBM) and valence band maximum (VBM), respectively. Also, the direct-to-indirect band gap transition can be achieved by applying biaxial strain. In particular, the 2D GeO2/MoSi2N4 vdWHs show a robust type-II band alignment under the effects of biaxial strain, interlayer distance and external electric field. The results provide a route to realize the robust type-II band alignment vdWHs, which is helpful for the implementation of optoelectronic nanodevices with stable characteristics. |
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| Keywords: | van der Waals heterostructures wide gap material global structure search robust type-II band alignment |
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