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Insight into the growth mechanism of black phosphorus
Authors:Yongjie Wang  Qiang Yu  Jie Li  Junyong Wang  Kai Zhang
Institution:1. Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China2. CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
Abstract:Two-dimensional (2D) black phosphorus (BP) has attracted great attention in recent years in fundamental research as well as optoelectronics applications. The controllable synthesis of high-quality BP is vital to the investigation of its intrinsic physical properties and versatile applications. Originally, BP was mostly synthesized under high temperatures and pressures. Subsequently, metal flux, wet chemical and chemical vapor transport (CVT) methods had been appeared successively. The pulsed laser deposition (PLD) and CVT methods have been used to prepare high-quality BP thin films on silicon substrates, which is significant for its monolithic integration and practical applications. To meet the demand of the scalable applications of BP, the direct preparation of BP films on dielectric substrates that avoids additional transfer process, is crucial to high-performance device implementation. In this review, the growing methods and corresponding mechanisms of BP are summarized and analyzed. Meanwhile, the view on the controllable growth of large-area, high-quality BP films is envisioned.
Keywords:black phosphorus  growth mechanism  nucleation  thin films  
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