Optimization of GaAsP/AlGaAs-based QW laser structures for high power 800 nm operation |
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Authors: | A Knauer F Bugge G Erbert H Wenzel K Vogel U Zeimer M Weyers |
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Institution: | 1. Ferdinand-Braun-Institut für H?chstfrequenztechnik, Rudower Chaussee 5, D-12489, Berlin, Germany
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Abstract: | We present a detailed study of the MOVPE growth of 800 nm diode laser structures based on the combination of a GaAsP quantum
well with well-established AlGaAs waveguide structures. By optimizing the strain and thickness of the quantum well highly-reliable
diode lasers with low threshold current and high efficiency were demonstrated. 100 μm aperture “broad area” devices mounted
epi-side up achieve a CW output power of 8.9 W with a wall-plug efficiency of 50%. These output powers represent record values
for diode lasers in this wavelength range. Reliability measurements at 1.5 W and 50°C ambient temperature suggest lifetimes
>10 000 h. |
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Keywords: | GaAsP AlGaAs metalorganic vapor phase epitaxy (MOVPE) quantum wells laser diodes |
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