Magneto-intersubband zener tunneling in a wide GaAs quantum well at high filling factors |
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Authors: | A V Goran A K Kalagin A A Bykov |
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Institution: | 1.Institute of Semiconductor Physics, Siberian Branch,Russian Academy of Sciences,Novosibirsk,Russia;2.Novosibirsk State Technical University,Novosibirsk,Russia |
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Abstract: | The dependence of the differential resistance r
xx
on the dc current density J
dc in a wide GaAs quantum well with two occupied size quantization subbands has been investigated at the temperature T = 4.2 K in the magnetic fields B < 1 T. A peak, whose position is given by the relation 2R
c
eE
H = ħωc/2, where R
c is the cyclotron radius, E
H is the Hall electric field, and ωc is the cyclotron frequency, has been observed in the r
xx
(J
dc) curves at high filling factors. The experimental results are attributed to Zener tunneling of electrons between the Landau
levels of different subbands. |
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Keywords: | |
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