Thermal annealing of GaSb quantum dots in GaAs formed by droplet epitaxy |
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| Institution: | 1. Department of Chemistry, Punjab Agricultural University, Ludhiana 141 004, India;2. Program for the Environment and Sustainability, Department of Environmental and Occupational Health, School of Public Health, Texas A&M University, 212 Adriance Lab Rd, 1266 TAMU, College Station, TX 77843, USA |
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| Abstract: | We investigate effects of annealing on GaSb quantum dots (QDs) formed by droplet epitaxy. Ga droplets grown on GaAs are exposed to Sb molecular beam and then annealed at Ta=340–450 °C for 1 min to form GaSb QDs. An atomic force microscope study shows that with the increase of Ta, the average diameter of dots increases by about 60%, while their density decreases to about 1/3. The photoluminescence (PL) of GaSb QDs is observed at around 1 eV only for those samples annealed above Ta=380 °C, which indicates that the annealing process plays an important role in forming high quality GaSb QDs. |
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