Growth and characterization of strain-compensated InGaAs/GaAsSb type II multiple quantum wells on InP substrate |
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| Institution: | 1. Frontier Science Innovation Center, Osaka Prefecture University, Osaka, Japan;2. Transmission Devices R&D Laboratories, Sumitomo Electric Industries Ltd., Osaka, Japan;1. Institute for Nuclear Research, NAS of Ukraine, 47, Pr. Nauky, 03028 Kyiv, Ukraine;2. V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, Pr. Nauky, 03028 Kyiv, Ukraine;3. SE “RI of Microdevices” STC “Institute for Single Cristals” NAS of Ukraine, 3, Pivnichno-Syretska Str., 04136 Kyiv, Ukraine;4. L.V. Pisarzhevski Physical Chemistry Institute NAS of Ukraine, 31, Pr. Nauky, 03028 Kyiv, Ukraine;1. Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro, Brazil;2. Departamento de Física, Universidade Federal do Piauí, Brazil;3. Department of Physics, The Pennsylvania State University, Pennsylvania, USA;4. Departamento de Química Fundamental, Universidade Federal de Pernambuco, Recife, Brazil;5. Departamento de Física, Universidade Federal de Pernambuco, Recife, Brazil;6. Groupe Nanoform – ICB, Université de Bourgogne, Bourgogne, France;1. Department of Physics, Nizhni Novgorod State University, 603000 Nizhni Novgorod, Russia;2. Research Institute for Chemistry, Nizhni Novgorod State University, 603000 Nizhni Novgorod, Russia;3. Physical-Technical Research Institute, Nizhni Novgorod State University, 603000 Nizhni Novgorod, Russia;1. N.N. Semenov Institute of Chemical Physics, Russian Academy of Sciences, Moscow 119991, Russia;2. Department of Mechanical Science and Engineering, University of Illinois at Urbana – Champaign, Urbana, IL 61801, USA;1. Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius, Lithuania;2. Vilnius Gediminas Technical University, Saulėtekio al. 11, Vilnius, Lithuania;1. Centre for Research in Nanotechnology and Science, Indian Institute of Technology Bombay, Mumbai, India;2. Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India |
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| Abstract: | Strain-compensated InGaAs/GaAsSb type II multiple quantum wells (MQWs) were grown by molecular beam epitaxy (MBE) and their optical and electrical properties were studied. High-quality strain-compensated type II MQWs were successfully grown, which have longer emission wavelength than that of lattice-matched type II MQWs. PL peak energy at 300 K of the strain-compensated type II MQWs, where the InGaAs layer has 0.6% tensile strain and GaAsSb layer has 0.6% compressive strain, shows a red-shift of 43 meV, which is 12 meV larger than the calculated energy shift of 31 meV. In addition, the PL intensity and the electron mobility of the strain-compensated MQWs are comparable to those of the lattice-matched MQWs, suggesting that the crystal quality of the strain-compensated MQWs is good and are very promising for low dark current photodiodes in the 2 μm wavelength region. |
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