Band structures of Bernal graphene modulated by electric fields |
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| Affiliation: | 1. Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur 208016, India;2. Microelectronics Research Center, 10100 Burnet Road, Building 160, University of Texas, Austin, TX 78758, USA;1. Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur 208016, India;2. Microelectronics Research Center, 10100 Burnet Road, Bldg. 160, University of Texas at Austin, Austin, TX 78758, United States;1. Applied Mechanics and Structure Safety Key Laboratory of Sichuan Province, School of Mechanics and Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, PR China;2. Key Laboratory of Mechanics on Environment and Disaster in Western China, The Ministry of Education of China, Lanzhou, Gansu 730000, PR China;3. Department of Mechanics and Engineering Science, College of Civil Engineering and Mechanics, Lanzhou University, Lanzhou, Gansu 730000, PR China |
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| Abstract: | The tight-binding model is utilized to investigate the influence of modulation electric fields on bilayer Bernal graphene (BBG). The electric potential changes the parabolic bands into oscillatory ones, and induces more band-edge states. As the strength of field is strengthened, it would enhance the oscillation of energy band, affect larger range of energy, induced more band-edge states, and cause more overlapping of valence and conduction band. While the period of field is enhanced, the number of sub-bands and band-edge states would increase. However the deformation of energy band is less violent. The essential features of electronic structure are directly reflected on the density of states (DOS). DOS displays many prominent peaks resulting from the induced band-edge states. |
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