Importance of electronic state of two-dimensional electron gas for electron injection process in nano-electronic devices |
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| Institution: | 1. Center for Interdisciplinary Research, Tohoku University, Sendai, Japan;2. Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Japan;3. Graduate School of Advanced Sciences of Matter, Hiroshima University, Hiroshima, Japan;4. Graduate School of Life Science, University of Hyogo, Hyogo, Japan;1. Institute of Theoretical Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland;2. Electrical Engineering Institute, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland;1. Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon, Republic of Korea;2. The Division of Electronics and Electrical Engineering, Dongguk University, Seoul, Republic of Korea;3. The School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu, Republic of Korea;1. Service de médecine du sport, CHU Pontchaillou, 2, rue Henri-Le-Guilloux, 35000 Rennes, France;2. Service traumatologie-orthopédie-rhumatologie, CMRRF de Kerpape, 56275 Ploemeur, France;3. Service de radiologie et d’imagerie médicale, CHU Hôpital sud, 16, rue de Bulgarie, 35000 Rennes, France;4. Clinique mutualiste de la porte de l’Orient, 3, rue Robert-de-la-Croix, 56324 Lorient, France |
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| Abstract: | We report the unexpected temperature dependence of electron tunneling from the two-dimensional electron gas (2DEG) to the Si-dot in a Si-dots floating gate metal-oxide-semiconductor (MOS) capacitor. We indicate that this temperature dependence of the electron tunneling cannot be explained by the conventional one-dimensional tunneling model, and show that it is necessary for a new model which includes the geometrical factor of the system. To extract a mechanism of the electron injection process from the 2DEG to the nano-structure, we have employed the numerical simulation, which includes both the geometrical condition of the system and the experimental setup. We suggest in our new tunneling model that the main contribution to the electron tunneling is induced by the wave-packet-like state of the electron below the Si-dots. We successfully show that the temperature dependence of the electron injection voltage in the Si-dots floating gate MOS capacitor fits our model. This indicates that the spatial distribution of electron density in the two-dimensional electron gas would play a crucial role in the electron tunneling. |
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