| Ge/Pb/Si(111)生长中Ge原子沿团簇边缘扩散的三维Monte-Carlo模拟 |
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| 引用本文： | 吴黎黎,吴锋民.Ge/Pb/Si(111)生长中Ge原子沿团簇边缘扩散的三维Monte-Carlo模拟[J].计算物理,2013,30(3):441-446. |
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| 作者姓名： | 吴黎黎 吴锋民 |
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| 作者单位： | 浙江师范大学凝聚态物理研究所, 浙江 金华 321004 |
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| 摘 要： | 用动态Monte-Carlo方法对Ge在单层表面活性剂Pb覆盖的Si(111)表面上沿团簇边缘扩散进行三维模拟.重点讨论Ge原子是否沿团簇边缘扩散,沿边缘扩散时的最大扩散步数及最近邻原子数对三维生长的影响,并计算薄膜表面粗糙度研究三维生长模式.模拟表明Ge沿团簇边缘扩散的行为对薄膜生长模式的影响很大,同时讨论了ES势对三维生长模式的影响.
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| 关 键 词： | 沿团簇边缘扩散 表面活性剂 表面粗糙度 Monte-Carlo模拟 |
| 收稿时间： | 2012-08-27 |
| 修稿时间： | 2012-12-06 |
3D Simulation of Ge Edge-Diffusion Around Clusters in Ge/Pb/Si(111) Growth |
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| WU Lili
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WU Fengmin.3D Simulation of Ge Edge-Diffusion Around Clusters in Ge/Pb/Si(111) Growth[J].Chinese Journal of Computational Physics,2013,30(3):441-446. |
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| Authors: | WU Lili WU Fengmin |
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| Institution: | Institute of Condensed matter Physics, Zhejiang Normal University, Jinhua 321004, China |
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| Abstract: | A kinetic Monte Carlo simulation is shown to investigate 3-dimensional growth of Ge on Si(111) substrate as monolayer of Pb atoms are pre-deposited as surfactant.We focus on Ge diffusion around edge of clusters.Effects of Ge diffusing around cluster edge,maximum diffusion steps for edge-diffusion and number of nearest neighbors on 3D growth mode are discussed.Coverage dependences of surface roughness are calculated to investigate growth mode.It shows that Ge edge-diffusion around clusters plays an important role on growth mode of 3D film growth.Effects of ES barrier on growth mode on Ge/Pb/Si(111) are explored. |
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| Keywords: | edge-diffusion around clusters surfactant surface roughness Monte-Carlo simulation |
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