Spectral and temporal characteristics of double-sided heterostructure lasers based on GaAlAs

An investigation was made of the current dependences of the carrier lifetime and of the emission spectrum of stripe double-sided heterostructure lasers based on GaAlAs operated under conditions corresponding to the transition from spontaneous emission to lasing in the range of currents up to 2I_th. The dependence of on the ratio I/I_th was found to be stronger than for homojunction lasers.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 26–29, November, 1980.