Characterization of amorphous silicon films by contactless transient photoconductivity measurements

Contactless transient photoconductivity measurements of intrinsic a-Si: H films in the microwave frequency range are presented. The measurements are evaluated quantitatively and the electron drift mobility is determined. It is shown that the influence of the surface on the observed decay behaviour can be neglected. A relation between the long time decay behaviour and the position of the Fermi level is observed.