Band gap engineering approaches to increase InGaN/GaN LED efficiency |
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| Authors: | M Auf der Maur K Lorenz A Di Carlo |
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| Institution: | 1. Department of Electronic Engineering, University of Rome “Tor Vergata”, 00133, Rome, Italy
2. Unidade de Física e Aceleradores, Instituto Tecnologico e Nuclear, Sacavém, Portugal
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| Abstract: | Nitride-based quantum well (QW) LEDs for lighting applications suffer from efficiency issues related to the strong built-in fields due to the difference in electric polarization of the constituent materials. In this paper we present a study based on device simulation showing the beneficial impact of band gap engineering approaches on device performance in particular for green LEDs. |
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