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Study on GaN-based light emitting diode with InGaN/GaN/InGaN multi-layer barrier |
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| Authors: | Li-Wen Cheng Chun-Yan Xu Yang Sheng Chang-Sheng Xia Wei-Da Hu Wei Lu |
| Affiliation: | 1. National Lab for Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China 2. Wuxi Institute of Communications Technology, No. 98, QianRong Road, Wuxi City, 214151, Jiangsu Province, China 3. Crosslight Software China, Suite 906, Building JieDi, 2790 Zhongshan Bei Road, Shanghai, 200063, China |
| Abstract: | The current study investigates GaN-based light-emitting diodes (LEDs) with InGaN/GaN/InGaN multi-layer barrier (MLB). Simulation results show that GaN-based LEDs with MLB have better performance than conventional GaN-based LEDs with only one GaN barrier because of the enhancement in hole injection into the quantum well and decrease in electron leakage current. |
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