Preparation and properties of semiconductor CuO nanoparticles via a simple precipitation method at different reaction temperatures

Preparation and properties of CuO nanoparticles as an important p-type semiconductor via a simple precipitation method at different reaction temperatures varying from 10 to 115°C using copper acetate as a starting material have been reported. In addition, we investigated the influence of the ultrasonic irradiation through synthesizing the nanosized CuO at 60°C. Samples were characterized by XRD, FT-IR, SEM, TEM and UV-Vis techniques. XRD patterns of samples were identical to the single-phase pure CuO with a monoclinic structure. FT-IR spectra exhibited sharp peaks at around 519 and 598?cm^?1 which can be assigned to vibrations of the Cu-O bond. Results indicated that properties of samples had great dependence on the temperature and ultrasonic irradiation. The crystallite size and crystallization increased with increasing the temperature from 10 to 115°C. The band gap of samples was estimated to be in the range of 1.9–2.9?eV that is larger than the reported value for the bulk CuO (1.85?eV). This study provides a simple method for the preparation of nanosized CuO with a better surface uniformity and a narrow size distribution. Synthesized CuO samples with adjustable and controllable optical properties make the applicability of copper oxide even more versatile.