Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes |
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| Authors: | Baile Chen W. Y. Jiang A. L. Holmes Jr. |
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| Affiliation: | 1. Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, 22904-4743, USA
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| Abstract: | In this paper, the transition wavelength and wave function overlap of type-II InxGa1-xAs/GaAs1-ySby quantum wells are numerically calculated using a 4-band k · p Hamiltonian model. The simulation results indicate that absorption wavelength from 2 to 4?μm can be achieved with a strain compensated quantum well structure. The transition wavelength and wave function overlap can be optimized by properly selecting the thicknesses and composition of the quantum well layers. |
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