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Investigation of W-Ge-N deposited on Ge as a diffusion barrier for Cu metallization |
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| Authors: | S Rawal DP Norton TJ Anderson L McElwee-White |
| Institution: | (1) Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA;(2) Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA;(3) Department of Chemistry, University of Florida, Gainesville, FL 32611, USA |
| Abstract: | The properties of W-Ge-Nthin films were investigated as a diffusion barrier material for Cu metallization. The W-Ge-Nfilms were grown by reactive sputtering on a single crystal Ge substrate. This was followed by in-situ deposition of Cu. Diffusion barrier test was performed by annealing the film stack under Ar atmosphere. Phase identification and film crystallization were determined by X-ray diffraction. The deposited W-Ge-Nfilms remained amorphous even after high temperature annealing. The Cu diffusion profile in the film was assessed by Auger electron spectroscopy and energy dispersive spectroscopy. The results indicate that Cu diffusion was minimal in W-Ge-Nfilms even at high annealing temperatures. Interface reactions and properties were analyzed by cross-section transmission electron microscopy. The results suggest that W-Ge-Nmay be a superior diffusion barrier as compared to WNx for Cu metallization. PACS 66.30.Ny; 68.35.Rh; 68.37.Lp; 68.60.Dv |
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