| GaAs中非晶态与晶态界面晶格象的光衍射分析 |
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| 引用本文： | 林迪,梁静国. GaAs中非晶态与晶态界面晶格象的光衍射分析[J]. 物理学报, 1986, 35(6): 803-807 |
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| 作者姓名： | 林迪 梁静国 |
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| 作者单位： | 北京大学物理系 |
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| 摘 要： | 我们利用光学衍射仪对离子注入后GaAs中晶态区与非晶态区界面的高分辨晶格象进行了分析。得到了界面附近结构变化的初步结果。由非晶态区到晶态区存在如下五个区域:非晶区;晶核与低维有序区;多晶区;单晶畸变区和单晶区。关键词：
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| 收稿时间： | 1985-08-11 |
ANALYSIS OF THE LATTICE IMAGE OF INTERFACE BETWEEN AMERPHOUS REGION AND CRYSTALLINE REGION IN GaAs WITH OPTICAL DIFFRACTOMETER |
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| LIN DI and LIANG JING-GUO. ANALYSIS OF THE LATTICE IMAGE OF INTERFACE BETWEEN AMERPHOUS REGION AND CRYSTALLINE REGION IN GaAs WITH OPTICAL DIFFRACTOMETER[J]. Acta Physica Sinica, 1986, 35(6): 803-807 |
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| Authors: | LIN DI and LIANG JING-GUO |
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| Abstract: | We analysed the high resolution lattice image of interface between crystalline region and amorphous region produced by ion implantation in GaAs with optical diffra-ctometer. The preliminary results show the structure variation at the interface. There are five districts from amorphous to crystalline region. They are: amcrphous area; nuclei, crystallite and low dimensional ordered area; polycrystalline area; distorted mo-nocrystalline area; and monocrystalline area. |
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