| Strong Electron Field Emission from Nano-CdS Modified Porous Silicon |
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| 作者姓名： | 徐岭 韩冠琪 翁健 谭海岚 李敬辉 张宇 徐骏 黄信凡 谢国伟 |
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| 作者单位： | [1]StateKeyLaboratoryofSolidStateMicrostructuresandDepartmentofPhysics,NanjingUniversity,Nanjing210093 [2]DepartmentofPhysics,HongKongBaptistUniversity,KowloonTong,HongKong |
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| 摘 要： | A nano-CdS modified porous silicon (nano-CdS/PS) field emitter is fabricated by chemical method at room temperature. The electron field emission characteristics show that the turn-on field for nano-CdS/PS is about 4.0 Vim and the emission current reaches about 20μA/cm^2 at 5.0 V/μm. This emission current is 20 times larger than that of the PS substrate without nano-CdS modification. The strong field emission properties make the nano-CdS/PS field emitter a good candidate for applications in the field of electronic and optoelectronic devices.
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| 关 键 词： | 纳米硫化镉 多孔硅修正 强电子场发射 Ⅱ-Ⅺ半导体材料 半导体量子点 |
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