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Modeling of certain nonuniform processes in semiconductor technology
Authors:B A Zon  S B Ledovskii  A N Likholet
Institution:(1) Voronezh State University, 394693 Voronezh, Russia
Abstract:In this paper two problems are formulated and solved: the problem of diffusion in a two-phase system with a moving boundary, and the problem of taking into account the finite reaction rate for formation of the new phase. A numerical solution is found by a variational method, which has a number of practical advantages. Zh. Tekh. Fiz. 68, 75–82 (April 1998)
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