Modeling of certain nonuniform processes in semiconductor technology |
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Authors: | B A Zon S B Ledovskii A N Likholet |
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Institution: | (1) Voronezh State University, 394693 Voronezh, Russia |
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Abstract: | In this paper two problems are formulated and solved: the problem of diffusion in a two-phase system with a moving boundary,
and the problem of taking into account the finite reaction rate for formation of the new phase. A numerical solution is found
by a variational method, which has a number of practical advantages.
Zh. Tekh. Fiz. 68, 75–82 (April 1998) |
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Keywords: | |
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