Transport properties of Y3Fe5O12 garnet crystals |
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Authors: | I. D. Lomako V. I. Pavlov N. Ya. Shishkin |
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Affiliation: | (1) Institute of Solid-State and Semiconductor Physics, National Academy of Sciences of Belarus, ul. Brovki 17, Minsk, 220072, Belarus;(2) Belarussian State Technological University, ul. Sverdlova 13a, Minsk, 220050, Belarus;(3) Belarussian State Pedagogical University, ul. Sovetskaya 18, Minsk, 220809, Belarus |
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Abstract: | The temperature dependence of electrical resistivity ρ and thermopower θ is studied for a series of Y3Fe5O12 (YIG) garnet single crystals with different levels of optical and structural quality. The effect of some technology-related impurities on the value of ρ is discussed. It is shown for the first time that the experimental data on the absorption coefficient and electrical resistivity can be interpreted based on a single physical parameter, namely, the intensity ratio of coherent and incoherent X-ray scattering (K/nk). This ratio characterizes the fraction of conduction electrons in a given sample. The results are discussed with due regard for the nonequivalence of the planes of the {110} and {111} types. The additional details of the charge-transfer mechanism are established for the (111)-oriented YIG samples. It is suggested that the ρ values could be characterized in terms of nk or nk/K. |
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