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The Effect of an Axial Magnetic Field at the Interface of a Crystal Grown by the Czochralski Method
Authors:CARTWRIGHT  R A; EL-KADDAH  N; SZEKELY  J
Institution: Department of Materials Science and Engineering, Massachusetts Institute of Technology Cambridge, Massachusetts 02139, U.S.A.
Abstract:A mathematical model has been developed which aims to give insightinto the transport phenomena in the vicinity of the interfaceof a crystal grown by the Czochralski method in the presenceof an axial magnetic field. The fluid flow, temperature andconcentration fields in this region have a strong effect onthe distribution of impurities and the occurrence of cracks,dislocations and other physical defects in the crystal and soknowledge and ultimately control of these factors is of greatpractical importance. The model incorporates rotation of both the crystal and crucibleby considering the crystal to be an infinite disc rotating ina semi-infinite fluid which may be rotating at infinity. Axialsymmetry is assumed and the magnetic Prandtl number is consideredto be very much less than unity. This means that induced currentscan be neglected and allows a similarity solution to be developed.The system of partial differential equations can then be replacedby an ordinary differential boundary-value problem which issolved numerically.
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