Temperature dependence of hole saturation velocity in silicon

Thep ⁺ np ⁺ diode is used to determine the hole drift velocity versus field curves in silicon as a function of temperature. By taking the analytical expression of the hole drift velocity,v=v _m (E/E _c )/(1+E/E _c ),v _m andE _c are obtained in the temperature range from 210–420 K.v _m varies from 1.04×10⁷ cm/sec at 210 K to 1.11×10⁷ cm/sec at 420 K, whileE _c increases from 1.05×10⁴ V/cm at 210 K to 5.3×10⁴ V/cm at 420 K. The curve at 300 K is very close to the result of Norris and Gibbons.