Epitaxial periodic p-n structures in PbS

The electrical and photoelectrical properites of periodic p-n structures in an epitaxial film of PbS are studied. The plane of the junctions is perpendicular to the plane of the film. The possibility of using such structures in the photodiode mode as low inertia detectors of IR radiation is shown. Qualitative agreement of the dark characteristics (volt-ampere curve, temperature dependence of resistance) of the p-n structure and photosensitive polycrystalline films was noted. This confirms the hypothesis that in sensitization of polycrystalline films, barriers of the p-n junction type are formed.