Exciton optics of a disordered semiconductor

Interband light absorption in a disordered semiconductor is considered with due allowance for exciton effects. Allowance is made for the scattering of the electron and hole in a weak static random field and also for collisions of the second kind experienced by the exciton on interaction with a random field. It is shown that the contribution of these latter to the half width of the absorption line of the exciton spectrum (even at temperatures of the order of the exciton ionization energy) is considerably smaller than the contribution arising from the scattering of the particles forming the exciton.