微晶硅锗太阳电池本征层纵向结构的优化

采用射频等离子体增强化学气相沉积技术, 研究了辉光功率对微晶硅锗材料结构特性和光电特性的影响, 提出使用功率梯度的方法制备微晶硅锗薄膜太阳电池本征层. 优化后的微晶硅锗本征层不仅保持了晶化率纵向分布的均匀性, 而且形成了沿生长方向由宽到窄的渐变带隙分布, 使电池的填充因子和短路电流密度都得到了提高. 采用此方法制备的非晶硅/微晶硅锗双结叠层电池转换效率达到了9.54%.

Optimization of the longitudinal structure of intrinsic layer in microcrystalline silicon germanium solar cell

Using radio-frequency plasma enhanced chemical vapor deposition, based on the influences of discharge power on structural and photoelectric properties of μc-SiGe:H thin films, RF power profiling technique is developed during the deposition of μc-SiGe:H intrinsic layer. The optimized μc-SiGe:H intrinsic layer not only maintains homogeneity of the crystalline volume fraction along the depth profile, but also forms a band gap profiling configuration from wide to narrow in the direction of growth. By this method, the fill factor and the short-circuit current density of μc-SiGe:H solar cell are significantly improved, and an efficiency of 9.54% for the a-Si:H/μc-SiGe:H tandem solar cell is achieved.