| 前驱体和退火温度对Nd2O3薄膜组分影响的定量研究 |
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| 引用本文： | 张旭杰*,刘红侠,范小娇,樊继斌.前驱体和退火温度对Nd2O3薄膜组分影响的定量研究[J].物理学报,2013,62(3):37701-037701. |
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| 作者姓名： | 张旭杰* 刘红侠 范小娇 樊继斌 |
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| 作者单位： | 西安电子科技大学微电子学院, 宽禁带半导体材料与器件重点实验室, 西安 710071 |
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| 基金项目： | 国家自然科学基金(批准号: 61076097, 60936005)、 教育部科技创新工程重大项目培育资金(批准号: 708083)和中央高校基本科研业务费专项资金(批准号: 20110203110012)资助的课题. |
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| 摘 要： | 采用Nd(thd)3和O3作为反应前驱体, 利用先进的原子层淀积方法在P型硅(100)衬底上制备了超薄Nd2O3介质膜, 并在N2气氛下进行了退火处理. 采用X射线光电子能谱仪对薄膜样品组分进行分析. 研究结果表明, 淀积过程中将前驱体温度从175 ℃提高到185 ℃后, 薄膜的质量得到提高, O/Nd 原子比达到1.82, 更接近理想的化学计量比, 介电常数也从6.85升高到10.32.
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| 关 键 词： | 原子层淀积 Nd2O3 前驱体温度 X射线光电子能谱仪 |
| 收稿时间： | 2012-08-18 |
Quantitative analysis on the influences of the precursor and annealing temperature on Nd2O3 film composition |
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| Zhang Xu-Jie,Liu Hong-Xia,Fan Xiao-Jiao,Fan Ji-Bin.Quantitative analysis on the influences of the precursor and annealing temperature on Nd2O3 film composition[J].Acta Physica Sinica,2013,62(3):37701-037701. |
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| Authors: | Zhang Xu-Jie Liu Hong-Xia Fan Xiao-Jiao Fan Ji-Bin |
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| Institution: | Microelectronics School, Xidian University, Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, Xi'an 710071, China |
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| Abstract: | In this paper, ultra-thin Nd2O3 dielectric films are deposited on p-type silicon substrates by advanced atomic layer deposition method. Nd (thd)3 and O3 are used as the reaction precursors separately. The as-grown samples are annealed in N2 atmosphere in a temperature range of 700—900 ℃. The samples are investigated at room temperature by X-ray photoelectron spectroscopy and the changes of the film composition at different annealing temperatures are discussed in detail. For a higher precursor temperature of 185 ℃ in the deposition process, the ratio of oxygen to neodymium atoms for the as-grown film is 1.82, which is close to the stoichiometry. Dielectric constant increases from 6.85 to 10.32. |
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| Keywords: | atomic layer deposition Nd2O3 precursor temperature X-ray phoroelectron spectroscopy |
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