| 在(100)GaAs衬底上低温液相外延晶格匹配的In1-xGaxAs1-yPy层及其特性研究 |
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| 引用本文： | 涂相征,万寿科,何登龙.在(100)GaAs衬底上低温液相外延晶格匹配的In1-xGaxAs1-yPy层及其特性研究[J].发光学报,1981,2(2):64-72. |
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| 作者姓名： | 涂相征 万寿科 何登龙 |
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| 作者单位： | 中国科学院半导体研究所 |
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| 摘 要： | 介绍一种低温液相外延技术,可在650℃在GaAs衬底上生长晶格匹配和组份可重复的In1-xGaxAs1-yPy层。给出对外延层进行场发射扫描电镜观察、电子探针、X光双晶衍射、俄歇电子谱和光荧光测量得到的结果。结果表明外延层具有平坦的异质结界面和良好的晶体特性。同时研究了异质结界面的粗糙度和组份梯度变化区域的宽度和晶格失配率的关系。
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| 收稿时间： | 1981-03-16 |
STUDY OF LOW TEMPERATURE LPE-GROWN LATTICE MATCHED In1-xGaxAs1-yPy LAYERS ON (100) GaAs AND RELATED PROPERTIES |
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| Tu Xiang-zheng,Wan Shou-ke,He Deng-long.STUDY OF LOW TEMPERATURE LPE-GROWN LATTICE MATCHED In1-xGaxAs1-yPy LAYERS ON (100) GaAs AND RELATED PROPERTIES[J].Chinese Journal of Luminescence,1981,2(2):64-72. |
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| Authors: | Tu Xiang-zheng Wan Shou-ke He Deng-long |
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| Institution: | Institute of Semiconductors, Chinese Academy of Sciences |
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| Abstract: | The liquid phase epitaxial technique which permits to grow lattice matched In1-xGaxAs1-yPy layers with reproducible composition on (100) GaAs at low temperature of 650℃. The results obtained by field emission microscopy observation, electron microscopy, X-ray double crystal diffraction, Auger electron spectroscopy and photoluminescence measurements of the epitaxial layers were given.It is shown that the epitaxial layers have flat interface of heterojunctions and good crystal quality.The relationship between lattice mismatch and interface roughness and interface width with graded composition profile of heterojunctions was also studied. |
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